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View AllSorry! Kingston KVR1333D3S9/4G 4 GB DDR3 RAM is sold out.
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Overview
This Kingston kvr1333d3s9/4g 512M x 64-bit 4GB DDR3 RAM is based on sixteen 256M x 8-bit DDR3-1333 FBGA components and has 204-pin SODIMM with gold contact fingers. This Kingston memory module is fully compatible with all desktop computers and is a value for price product that will definitely increase your computing speed by working on dual channel mode. The RAM has Refresh Command Time of 160ns (min) and you can now buy this memory module online on Snapdeal at an affordable price. You will also get 1 year manufacturer warranty on your purchase.
Memory Type
This unbuffered DIMM Memory Module has a 64 x 512 MB DRAM Structure and 204-pin Configuration. This RoHS compliant Kingston kvr1333d3s9/4g is built with DDR3 SDRAM technology. It is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9.
RAM Size & Speed
The Kingston kvr1333d3s9/4g memory module has a storage capacity of 4GB and memory clock speed is 1333 mhz. Memory frequency of this RAM is 667 MHz that makes this memory module really fast and applications load a lot faster. Its 4GB storage capacity also makes it a better choice for playing latest high-end computer games those are really memory heavy and requires huge amount of free RAM space.
Compatibility
Kingston is a brand known for delivering best quality products with optimal performance and this 4 GB RAM brings ValueRAM memory modules that are engineered to meet industry specifications and are also thoroughly tested for superior quality. This RAM module is 100 percent compatible with all desktop computers and will make your system work with improved speed and efficiency.
Additional Features
The 4 GB Kingston kvr1333d3s9/4g DDR3 RAM is packed with futuristic features that have made it a desirable product to thousands of users. Some of its noteworthy additional features are - Bi-directional Differential Data Strobe, On Die Termination using ODT pin, 3.9us at 85DegC < TCASE < 95DegC, Gold Lead plating, Internal self calibration through ZQ pin (RZQ: 240 ohm 1 percent), Average Refresh Period 7.8us at lower than TCASE 85DegC, 8 Independent Internal Bank, 8-bit Pre-Fetch, Asynchronous Reset, Double sided component, CL (IDD) - 9 cycles, fresh to Active / Refresh 160ns (min), Row Cycle Time (tRCmin) - 49.5ns (min), Operating Temperature 0DegC to 85DegC, Power (Operating) - 1.410 W etc.
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